ANALYSIS OF POST DEPOSITION PROCESSING FOR CDTE/CDS THIN-FILM SOLAR-CELLS

被引：76
作者：
MCCANDLESS, BE
BIRKMIRE, RW
机构：
[1] Institute of Energy Conversion, University of Delaware, Newark
来源：
SOLAR CELLS | 1991年 / 31卷 / 06期
关键词：
D O I：
10.1016/0379-6787(91)90095-7
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A post-deposition process for optimizing the efficiency of thin film CdTe/CdS solar cells deposited by physical vapor deposition has been developed and the effects of the individual process steps on the materials and device properties have been analyzed. A 400-degrees-C heat treatment with CdCl2 restructures the CdTe resulting in enhanced grain size and crystallographic reorientation. Structural and optical measurements indicate interdiffusion of sulfur and tellurium during the heat treatment resulting in formation of a CdSxTe1-x layer with a narrower band gap than CdTe. Bifacial current-voltage and quantum efficiency analysis of the CdTe devices at various stages of the optimization process shows the evolution of the device from a p-i-n structure to a heterojunction. A chemical treatment improves the open circuit voltage (V(oc)) and Cu/Au contact to the CdTe. The optimization process can be applied to cells using CdTe and CdS deposited by different methods.
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页码：527 / 535
页数：9
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