INSITU ULTRAVIOLET-LASER TREATMENT DURING PLASMA DEPOSITION FOR THE IMPROVEMENT OF FILM QUALITIES IN HYDROGENATED AMORPHOUS-SILICON

被引：15

作者：

SUZUKI, A

TOYOSHIMA, Y

MCELHENY, PJ

MATSUDA, A

机构：

[1] Electrotechnical Laboratory, Tsukuba, Ibaraki, 305

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 5A期

关键词：

ULTRAVIOLET LASER IRRADIATION; HYDROGENATED AMORPHOUS SILICON; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; OPTICAL GAP; HYDROGEN CONTENT;

D O I：

10.1143/JJAP.30.L790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon (a-Si:H) films were prepared with ultraviolet laser irradiation to modify the growing surface during the plasma-enhanced chemical vapor deposition. Using this treatment, the photoconductivity was improved by three to four orders of magnitude in films deposited at substrate temperatures below 100-degrees-C. Additionally, the optical band gap remained unchanged with the in-situ laser treatment. Consequently, high quality a-Si:H films, characterized by high photoconductivity and wide optical gap, were obtained at low substrate temperatures.

引用

页码：L790 / L792

页数：3

共 6 条

[1]

FOROUHI AR, 1989, EMIS DATA REV SERIES, V1, P320

[2] DEPOSITION OF HIGH-QUALITY A-SI-H BY DIRECT PHOTODECOMPOSITION OF SI2H6 USING VACUUM ULTRAVIOLET-LIGHT [J].