LATTICE-RELAXATION AROUND SUBSTITUTIONAL DEFECTS IN SEMICONDUCTORS

被引：56

作者：

BECHSTEDT, F ^{[1
]}

HARRISON, WA ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5041 / 5050

页数：10

共 40 条

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