SILICON EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION

被引：25

作者：

LEE, SK

KU, YH

KWONG, DL

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 18期

关键词：

D O I：

10.1063/1.101288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1775 / 1777

页数：3

共 8 条

[1]

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[2]

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REIF, R .

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APPLIED PHYSICS LETTERS, 1985, 47 (07) :721-723

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[6]

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[7] NONEQUILIBRIUM BORON DOPING EFFECTS IN LOW-TEMPERATURE EPITAXIAL SILICON FILMS [J].

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HARAME, DL .

APPLIED PHYSICS LETTERS, 1987, 50 (02) :113-115

[8] EPITAXIALLY GROWN BASE TRANSISTOR FOR HIGH-SPEED OPERATION [J].

SUGII, T ;

YAMAZAKI, T ;

FUKANO, T ;

ITO, T .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) :528-530

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