NANOMETER X-Y POSITIONING STAGES FOR SCANNING AND STEPPING

被引:4
作者
CHITAYAT, A
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词
D O I
10.1116/1.584547
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:1412 / 1417
页数:6
相关论文
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[1]   QUANTITATIVE-ANALYSIS OF RESOLUTION AND STABILITY IN NANOMETER ELECTRON-BEAM LITHOGRAPHY [J].
KRATSCHMER, E ;
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2074-2079
[2]   FABRICATION OF FULLY SCALED 0.5-MU-M N-TYPE METAL-OXIDE SEMICONDUCTOR TEST DEVICES USING SYNCHROTRON X-RAY-LITHOGRAPHY - OVERLAY, RESIST PROCESSES, AND DEVICE FABRICATION [J].
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DIMILIA, V ;
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WARLAUMONT, JM ;
WILSON, AD ;
CROCKATT, D ;
DEVENUTO, R ;
HILL, B ;
HSIA, LC ;
RIPPSTEIN, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2147-2152