PROPERTIES OF HIGH-PURITY ALXGA1-XAS GROWN BY THE METAL-ORGANIC VAPOR-PHASE-EPITAXY TECHNIQUE USING METHYL PRECURSORS

被引：130
作者：
KUECH, TF
WOLFORD, DJ
VEUHOFF, E
DELINE, V
MOONEY, PM
POTEMSKI, R
BRADLEY, J
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 02期
关键词：
D O I：
10.1063/1.339792
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：632 / 643
页数：12
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