INTERFACE STATES AT GA-GAAS INTERFACE

被引：33

作者：

BACHRACH, RZ ^{[1
]}

BIANCONI, A ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT APPL PHYS,STANFORD SYNCHROTRON RADIAT LAB,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 02期

关键词：

D O I：

10.1116/1.569461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：525 / 528

页数：4

共 22 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

[2]

BACHRACH RZ, UNPUBLISHED

[3]

BACHRACH RZ, 1976, P INT WORKSHOP DEVEL, P9

[4]

BACHRACH RZ, 1977, 5 P INT C VAC UV RAD, V2, P212

[5]

BACHRACH RZ, 1976, MAT RES SOC S MBE

[6]

CHADI DJ, UNPUBLISHED

[7]

CHADI DJ, COMMUNICATION

[8] SURFACE-STATES AND METAL OVERLAYERS ON (110) SURFACE OF GAAS [J].

CHELIKOWSKY, JR ;

LOUIE, SG ;

COHEN, ML .

CHO, AY .

[10] SURFACE-STRUCTURES OF COMPOUND SEMICONDUCTORS [J].

DUKE, CB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :870-877