SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION

[1] DISTRIBUTION OF MOBILE CARRIERS IN PINCH-OFF REGION OF AN INSULATED-GATE FIELD-EFFECT TRANSISTOR AND ITS INFLUENCE ON DEVICE BREAKDOWN [J]. SOLID-STATE ELECTRONICS, 1971, 14 (08) : 723 - +

[2] BARRON MB, 1969, 55011 STANF U STANF

[3] CAUGHEY M, 1973, SOLID STATE TECHNOL, V16, P33

[4] CORRELATION OF EXPERIMENTS WITH A 2-SECTION-MODEL THEORY OF SATURATION DRAIN CONDUCTANCE OF MOS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1149 - +

[5] NEW APPROACH TO THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 241 - 253

[6] ELMANSY YA, 1974, THESIS CARLETON U

[7] ELMANSY YA, 1975, DEC INT EL DEV M TEC

[8] CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 108 - +

[9] CURRENT-VOLTAGE CHARACTERISTICS OF SMALL SIZE MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (03) : 382 - +

[10] CARRIER MOBILITY AND CURRENT SATURATION IN MOS TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 129 - +

[1] DISTRIBUTION OF MOBILE CARRIERS IN PINCH-OFF REGION OF AN INSULATED-GATE FIELD-EFFECT TRANSISTOR AND ITS INFLUENCE ON DEVICE BREAKDOWN [J]. SOLID-STATE ELECTRONICS, 1971, 14 (08) : 723 - +

[2] BARRON MB, 1969, 55011 STANF U STANF

[3] CAUGHEY M, 1973, SOLID STATE TECHNOL, V16, P33

[4] CORRELATION OF EXPERIMENTS WITH A 2-SECTION-MODEL THEORY OF SATURATION DRAIN CONDUCTANCE OF MOS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1149 - +

[5] NEW APPROACH TO THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 241 - 253

[6] ELMANSY YA, 1974, THESIS CARLETON U

[7] ELMANSY YA, 1975, DEC INT EL DEV M TEC

[8] CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 108 - +

[9] CURRENT-VOLTAGE CHARACTERISTICS OF SMALL SIZE MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (03) : 382 - +

[10] CARRIER MOBILITY AND CURRENT SATURATION IN MOS TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 129 - +