SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION

被引：131
作者：
ELMANSY, YA
BOOTHROYD, AR
机构：
[1] BELL NO RES,OTTAWA,ONTARIO,CANADA
[2] CARLETON UNIV,DEPT ELECTR,OTTAWA K1S 5B6,ONTARIO,CANADA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 03期
关键词：
D O I：
10.1109/T-ED.1977.18716
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：254 / 262
页数：9
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