共 50 条
- [21] ANNEALING BEHAVIOR OF ELECTRON-IRRADIATED SILICON HEAVILY DOPED WITH PHOSPHORUS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (11): : 1476 - &
- [23] ISOTHERMAL ANNEALING OF ELECTRON-IRRADIATED N-TYPE SI BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (04): : 710 - &
- [24] ISOCHRONAL ANNEALING OF ELECTRON-IRRADIATED P-DOPED SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 397 - +
- [26] ANNEALING STUDIES OF ELECTRON-IRRADIATED COPPER AND COPPER HYDROGEN ALLOYS RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1984, 81 (1-2): : 155 - 158
- [27] AN INFRARED STUDY OF THE ANNEALING OF ELECTRON-IRRADIATED GALLIUM-ARSENIDE JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (03): : 581 - 589
- [28] DEFECT ANNEALING IN ELECTRON-IRRADIATED BORON-DOPED SILICON PHYSICAL REVIEW B, 1990, 41 (02): : 1019 - 1027
- [29] POSITRON-ANNIHILATION STUDY OF ANNEALING OF ELECTRON-IRRADIATED MOLYBDENUM JOM-JOURNAL OF METALS, 1975, 27 (12): : A23 - A23
- [30] POSITRON-ANNIHILATION STUDY OF ANNEALING OF ELECTRON-IRRADIATED MOLYBDENUM JOURNAL OF PHYSICS F-METAL PHYSICS, 1976, 6 (04): : 499 - &