PLASMA OSCILLATIONS IN HEAVILY DOPED N-TYPE SILICON

被引：1
作者：
ARAI, T
机构：
来源：
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1964年 / 84卷 / 5371期
关键词：
D O I：
10.1088/0370-1328/84/1/305
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：25 / &
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