OCTADECYLTRICHLOROSILANE MONOLAYERS AS ULTRATHIN GATE INSULATING FILMS IN METAL-INSULATOR-SEMICONDUCTOR DEVICES

被引：92

作者：

FONTAINE, P ^{[1
]}

GOGUENHEIM, D ^{[1
]}

DERESMES, D ^{[1
]}

VUILLAUME, D ^{[1
]}

GARET, M ^{[1
]}

RONDELEZ, F ^{[1
]}

机构：

[1] INST CURIE,PHYS & CHIM SECT,PHYSICOCHIM SURFACES & INTERFACES LAB,CNRS,F-75231 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to fabricate metal-insulator-semiconductor (MIS) devices with gate insulating films thinner than 5.0 nm, organic monolayers have been grafted on the native oxide layer of silicon wafers. We demonstrate that a single monolayer of octadecyltrichlorosilane with a 2.8 nm thickness allows to fabricate a silicon based MIS device with gate current density as low as 10(-8) A/cm2 at 5.8 MV/cm, insulator charge density lower than 10(10) cm-2, fast interface state density of the order of 10(11) CM-2 eV-1, and dielectric breakdown field as high as 12 MV/cm. Moreover, this insulating film is thermally stable up to 450-degrees-C.

引用

页码：2256 / 2258

页数：3

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