INVESTIGATION OF STABILITY OF P-CHANNEL ION-IMPLANTED MOS-TRANSISTORS BY BT TREATMENTS

被引：2
作者：
NAKAMURA, K [1 ]
KAMOSHIDA, M [1 ]
机构：
[1] NIPPON ELECTRIC CO LTD, IC DIV, 1753 SHIMONUMABE, NAKAHARA, KAWASAKI 211, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 10期
关键词：
D O I：
10.1143/JJAP.12.1635
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1635 / 1636
页数：2
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