INVESTIGATION OF STABILITY OF P-CHANNEL ION-IMPLANTED MOS-TRANSISTORS BY BT TREATMENTS

被引:2
作者
NAKAMURA, K [1 ]
KAMOSHIDA, M [1 ]
机构
[1] NIPPON ELECTRIC CO LTD, IC DIV, 1753 SHIMONUMABE, NAKAHARA, KAWASAKI 211, JAPAN
关键词
D O I
10.1143/JJAP.12.1635
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1635 / 1636
页数:2
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