INVESTIGATION OF STABILITY OF P-CHANNEL ION-IMPLANTED MOS-TRANSISTORS BY BT TREATMENTS

被引：2
作者：
NAKAMURA, K [1 ]
KAMOSHIDA, M [1 ]
机构：
[1] NIPPON ELECTRIC CO LTD, IC DIV, 1753 SHIMONUMABE, NAKAHARA, KAWASAKI 211, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 10期
关键词：
D O I：
10.1143/JJAP.12.1635
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1635 / 1636
页数：2
相关论文
共 50 条
[21]   SUBSTRATE CURRENT IN SILICON P-CHANNEL MOS TRANSISTORS [J].
RYAN, RD .
PROCEEDINGS OF THE IEEE, 1969, 57 (08) :1424-&
[22]   ORGANIC-COMPOUNDS INDUCING THE ROOM-TEMPERATURE INSTABILITIES OF P-CHANNEL SILICON GATE MOS-TRANSISTORS [J].
NAKAYAMA, H ;
SHINDO, M ;
ISHIKAWA, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1301-1303
[23]   ELECTRICAL CHARACTERISTICS OF BORON-IMPLANTED N-CHANNEL MOS-TRANSISTORS [J].
KAMOSHIDA, M .
SOLID-STATE ELECTRONICS, 1974, 17 (06) :621-626
[24]   MEASUREMENTS OF RESIDUAL DEFECTS AND 1-F NOISE IN ION-IMPLANTED P-CHANNEL MOSFETS [J].
WANG, KL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (04) :478-484
[25]   NBTI in SOI p-channel MOS field effect transistors [J].
Liu, ST ;
Ioannou, DE ;
Ioannou, DP ;
Flanery, M ;
Hughes, HL .
2005 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP, FINAL REPORT, 2005, :17-21
[26]   ION-IMPLANTED P-CHANNEL GAAS-MESFET USING SCHOTTKY-BARRIER HEIGHT TAILORING [J].
BAIER, SM ;
LEE, GY ;
CHUNG, HK ;
FURE, BJ ;
CIRILLO, NC .
ELECTRONICS LETTERS, 1987, 23 (05) :223-225
[27]   Investigation into Radiation Effects in a p-Channel MOS Transistor [J].
A. V. Kuzminova ;
N. A. Kulikov ;
V. D. Popov .
Semiconductors, 2020, 54 :877-881
[28]   Investigation into Radiation Effects in a p-Channel MOS Transistor [J].
Kuzminova, A., V ;
Kulikov, N. A. ;
Popov, V. D. .
SEMICONDUCTORS, 2020, 54 (08) :877-881
[29]   Characteristics of 4H-SiC n- and p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel [J].
Okamoto, Mitsuo ;
Iijima, Miwako ;
Nagano, Takahiro ;
Fukuda, Kenji ;
Okumura, Hajime .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)
[30]   OPTIMIZATION OF DEPLETION-MODE TRANSISTORS FOR AN MOS P-CHANNEL TECHNOLOGY [J].
SCHEMMERT, W ;
HOFFLINGER, B .
ELECTRONICS LETTERS, 1973, 9 (23) :555-556
12345