INVESTIGATION OF STABILITY OF P-CHANNEL ION-IMPLANTED MOS-TRANSISTORS BY BT TREATMENTS

被引：2
作者：
NAKAMURA, K [1 ]
KAMOSHIDA, M [1 ]
机构：
[1] NIPPON ELECTRIC CO LTD, IC DIV, 1753 SHIMONUMABE, NAKAHARA, KAWASAKI 211, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 10期
关键词：
D O I：
10.1143/JJAP.12.1635
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1635 / 1636
页数：2
相关论文
共 50 条
[1]   ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS [J].
NAKAMURA, K ;
KAMOSHIDA, M .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :334-340
[2]   ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS [J].
NAKAMURA, K ;
KAMOSHIDA, M .
NEC RESEARCH & DEVELOPMENT, 1974, (33) :29-37
[3]   ANNEALING CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS [J].
NAKAMURA, K ;
KAMOSHID.M .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4262-4267
[4]   CONDUCTANCE OF ION-IMPLANTED BURIED-CHANNEL MOS-TRANSISTORS [J].
SCHEMMERT, W ;
GABLER, L ;
HOEFFLINGER, B .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) :1313-1319
[5]   CHARGE TRANSPORT IN ION-IMPLANTED BURIED CHANNEL MOS-TRANSISTORS [J].
SCHEMMERT, W .
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1979, 33 (01) :23-31
[6]   NOISE CHARACTERISTICS OF ION-IMPLANTED MOS-TRANSISTORS [J].
NAKAMURA, K ;
KUDOH, O ;
KAMOSHIDA, M .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :3189-3193
[7]   CHARACTERISTICS OF P-CHANNEL MOS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS [J].
HSWE, M ;
SHOPBELL, ML ;
MAI, CC ;
PALMER, RB .
SOLID-STATE ELECTRONICS, 1972, 15 (11) :1237-+
[8]   ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS [J].
SWANSON, RM ;
MEINDL, JD .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (02) :146-+
[9]   THRESHOLD-VOLTAGE TEMPERATURE DRIFT IN ION-IMPLANTED MOS-TRANSISTORS [J].
SONG, BS ;
GRAY, PR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :661-668
[10]   IMPLANT DOSE PROFILE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED MOS-TRANSISTORS [J].
KUDOH, O ;
NAKAMURA, K ;
KAMOSHID.M .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4514-4519
12345