INVESTIGATION OF STABILITY OF P-CHANNEL ION-IMPLANTED MOS-TRANSISTORS BY BT TREATMENTS

被引：2

作者：

NAKAMURA, K ^{[1
]}

KAMOSHIDA, M ^{[1
]}

机构：

[1] NIPPON ELECTRIC CO LTD, IC DIV, 1753 SHIMONUMABE, NAKAHARA, KAWASAKI 211, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 10期

关键词：

D O I：

10.1143/JJAP.12.1635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1635 / 1636

页数：2

共 50 条

[1] ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS
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