CONTACT REACTION BETWEEN SI AND RARE-EARTH-METALS

被引：150

作者：

THOMPSON, RD

TSAUR, BY

TU, KN

机构：

[1] CALTECH,PASADENA,CA 91109

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 07期

关键词：

D O I：

10.1063/1.92442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：535 / 537

页数：3

共 14 条

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[4] SILICIDE FORMATION AND INTERDIFFUSION EFFECTS IN SI-TA, SIO2-TA AND SI-PTSI-TA THIN-FILM STRUCTURES [J].

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DAY, HM .

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[5]

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[7] SILICIDE FORMATION IN THIN MOLYBDENUM AND TUNGSTEN FILMS ON SINGLE-CRYSTAL SILICON SUBSTRATES AT RELATIVELY LOW-TEMPERATURES [J].

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SPERLING, R .

THIN SOLID FILMS, 1976, 37 (02) :185-194

[8]

THOMPSON RD, 1979, RC7989 IBM REP

[9]

Tu K. N., 1978, THIN FILMS INTERDIFF

[10] FORMATION OF VANADIUM SILICIDES BY INTERACTIONS OF V WITH BARE AND OXIDIZED SI WAFERS [J].

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ZIEGLER, JF ;

KIRCHER, CJ .

APPLIED PHYSICS LETTERS, 1973, 23 (09) :493-495

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