Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power

被引：10

作者：

Myroniuk, D. V. ^{[1
]}

Ievtushenko, A. I. ^{[1
]}

Lashkarev, G. V. ^{[1
]}

Maslyuk, V. T. ^{[2
]}

Timofeeva, I. I. ^{[1
]}

Baturin, V. A. ^{[3
]}

Karpenko, O. Yu. ^{[3
]}

Kuznetsov, V. M. ^{[3
]}

Dranchuk, M. V. ^{[1
]}

机构：

[1] NAS Ukraine, Frantsevich Inst Problems Mat Sci, 3 Krzhizhanovsky Str, UA-03680 Kiev, Ukraine

[2] NAS Ukraine, Inst Electron Phys, UA-88017 Uzhgorod, Ukraine

[3] NAS Ukraine, Inst Appl Phys, UA-40000 Sumy, Ukraine

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2015年 / 18卷 / 03期

关键词：

transparent conductive aluminium doped zinc oxide; AZO; electron irradiation; point defects; X-ray diffraction; stress; resistance;

D O I：

10.15407/spqeo18.03.286

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Transparent conductive oxide thin films of Al-doped ZnO grown by if magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5.10(14) e/cm(2). The films were produced using different sputtering powers. It has been shown that electron irradiation creates defects that lead to distortions of the crystal lattice, which results in reduced crystallinity of the films. Also, it leads to film heating that results in radiation annealing and relaxation of the lattice.

引用

页码：286 / 291

页数：6

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