TEMPERATURE-DEPENDENCE OF ELECTRON-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF SILICON

被引：6
|
作者：
HOEHL, D [1 ]
HEERA, V [1 ]
BARTSCH, H [1 ]
WOLLSCHLAGER, K [1 ]
SKORUPA, W [1 ]
VOELSKOW, M [1 ]
机构：
[1] ZENT INST KERNFORSCH,ROSSENDORF,GERMANY
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 122卷 / 01期
关键词：
D O I：
10.1002/pssa.2211220149
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K35 / K37
页数：3
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