MONTE-CARLO CALCULATION OF LOW-ENERGY ION COLLECTION IN THE PRESENCE OF SPUTTERING, RANGE SHORTENING, KNOCK-ON AND DIFFUSION

被引:42
作者
HAUTALA, M
机构
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 51卷 / 1-2期
关键词
D O I
10.1080/00337578008209265
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
引用
收藏
页码:35 / 42
页数:8
相关论文
共 16 条
  • [1] RANGES OF SOME LIGHT-IONS MEASURED BY (P, GAMMA) RESONANCE BROADENING
    ANTTILA, A
    BISTER, M
    FONTELL, A
    WINTERBON, KB
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (01): : 13 - 19
  • [2] RADIATION ENHANCED OUTDIFFUSION DURING ION-IMPLANTATION
    ANTTILA, A
    HAUTALA, M
    [J]. APPLIED PHYSICS, 1979, 19 (02): : 199 - 203
  • [3] BISTER M, RAD EFF
  • [4] RANGE PARAMETER DISTORTION IN HEAVY-ION IMPLANTATION
    BLANK, P
    WITTMAACK, K
    [J]. PHYSICS LETTERS A, 1975, 54 (01) : 33 - 34
  • [5] INFLUENCE OF SPUTTERING, RANGE SHORTENING AND STRESS-INDUCED OUT-DIFFUSION ON RETENTION OF XENON IMPLANTED IN SILICON
    BLANK, P
    WITTMAACK, K
    SCHULZ, F
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F): : 387 - 392
  • [6] ENERGY AND FLUENCE DEPENDENCE OF THE SPUTTERING YIELD OF SILICON BOMBARDED WITH ARGON AND XENON
    BLANK, P
    WITTMAACK, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1519 - 1528
  • [7] ANOMALOUS PENETRATION OF XENON IN TUNGSTEN CRYSTALS-A DIFFUSION EFFECT
    DAVIES, JA
    JESPERSGARD, P
    [J]. CANADIAN JOURNAL OF PHYSICS, 1966, 44 (07) : 1631 - +
  • [8] DEFECT FLOW INDUCED OUT-DIFFUSION IN A1-]ZN IMPLANTATIONS
    HIRVONEN, J
    ANTTILA, A
    HAUTALA, M
    [J]. PHYSICS LETTERS A, 1978, 66 (03) : 226 - 228
  • [9] RANGES OF AL-27(+) IONS IN 9 METALS MEASURED BY (P,GAMMA) RESONANCE BROADENING
    KEINONEN, J
    HAUTALA, M
    LUOMAJARVI, M
    ANTTILA, A
    BISTER, M
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 39 (3-4): : 189 - 193
  • [10] RANGES OF N-15+ IONS IN 10 METALS MEASURED BY (P,ALPHA-GAMMA) RESONANCE BROADENING
    LUOMAJARVI, M
    KEINONEN, J
    BISTER, M
    ANTTILA, A
    [J]. PHYSICAL REVIEW B, 1978, 18 (09): : 4657 - 4662