LOW-TEMPERATURE SILICON-NITRIDE DEPOSITION USING MICROWAVE-EXCITED ACTIVE NITROGEN

被引：17
|
作者：
SHIBAGAKI, M
HORIIKE, Y
YAMAZAKI, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷
关键词：
D O I：
10.7567/JJAPS.17S1.215
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：215 / 221
页数：7
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