GAAS-GAALAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING LATERALLY DIFFUSED JUNCTIONS

被引：38

作者：

LEE, CP

MARGALIT, S

URY, I

YARIV, A

机构：

[1] California Institute of Technology, Pasadena

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 07期

关键词：

D O I：

10.1063/1.90087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-threshold GaAs-GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi-insulating substrates and can be integrated with other components.

引用

页码：410 / 412

页数：3

共 9 条

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[4]

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[9]

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