COMMENT ON HALL-EFFECT IN PHOSPHORUS-DOPED SILICON

被引：6

作者：

DESHMUKH, VGI ^{[1
]}

机构：

[1] UNIV ST ANDREWS,SCH PHYS SCI,ST ANDREWS KY16 9ST,FIFE,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1978年 / 37卷 / 05期

关键词：

D O I：

10.1080/01418637808226461

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：649 / 651

页数：3

共 50 条

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