COMMENT ON HALL-EFFECT IN PHOSPHORUS-DOPED SILICON

被引：6
|
作者：
DESHMUKH, VGI [1 ]
机构：
[1] UNIV ST ANDREWS,SCH PHYS SCI,ST ANDREWS KY16 9ST,FIFE,SCOTLAND
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1978年 / 37卷 / 05期
关键词：
D O I：
10.1080/01418637808226461
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：649 / 651
页数：3
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