ENERGY RELAXATION AND INTERVALLEY RELAXATION OF HOT ELECTRONS IN N-TYPE GERMANIUM

被引:0
作者
SEEGER, K
SCHWEITZ.D
机构
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:415 / &
相关论文
共 11 条
[1]  
CONWELL EM, 1960, P INT C SEMICONDUCTO, P119
[2]   A STUDY OF ENERGY-LOSS PROCESSES IN GERMANIUM AT HIGH ELECTRIC FIELDS USING MICROWAVE TECHNIQUES [J].
GIBSON, AF ;
GRANVILLE, JW ;
PAIGE, EGS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) :198-217
[3]  
GIBSON AF, 1960, P INT C SEMICONDUCTO, P112
[4]   MICROWAVE MEASUREMENT OF COMPLEX PERMITTIVITY OF SEMICONDUCTORS [J].
GUNN, MW .
PROCEEDINGS OF THE IEEE, 1964, 52 (02) :185-&
[5]   MEASUREMENT OF SEMICONDUCTOR PROPERTIES IN A SLOTTED-WAVEGUIDE STRUCTURE [J].
GUNN, MW ;
BROWN, J .
PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1965, 112 (03) :463-&
[6]  
GUNN MW, 1964, J ELECTRON CONTR, V16, P481
[7]   ELECTRICAL CONDUCTION IN N-TYPE GERMANIUM AT LOW TEMPERATURES [J].
KOENIG, SH ;
BROWN, RD ;
SCHILLING, W .
PHYSICAL REVIEW, 1962, 128 (04) :1668-&
[8]   DISTRIBUTION FUNCTIONS FOR HOT ELECTRONS IN MANY-VALLEY SEMICONDUCTORS [J].
REIK, HG ;
RISKEN, H .
PHYSICAL REVIEW, 1961, 124 (03) :777-&
[9]  
Schmidt-Tiedemann K. J., 1963, PHILIPS RES REP, V18, P338
[10]   ANISOTROPY OF CONDUCTIVITY OF N-TYPE GERMANIUM IN STRONG D.C. FIELDS [J].
SCHWEITZER, D ;
SEEGER, K .
ZEITSCHRIFT FUR PHYSIK, 1965, 183 (02) :207-+