Doping puzzles in II-VI and III-V semiconductors

被引：21
|
作者：
Chadi, DJ
Park, CH
机构：
来源：
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-2卷
关键词：
deep donor levels; deep acceptor levels; II-VI semiconductors; III-V semiconductors; self-compensation; DX centers; AX centers; persistent photoconductivity;
D O I：
10.4028/www.scientific.net/MSF.196-201.285
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The problems of n- and p-type doping in wide-band-gap II-VI semiconductors III-V semiconductors is examined. A first principles pseudopotential. approach is used to identify the most important self-compensation mechanisms. Two distinct classes of DX centers are predicted in halogen doped II-VT semiconductors. A new type of low energy lattice instability involving two broken bonds is proposed to be the most effective mechanism in N and Cl-doped II-VI compounds and in some chalcogen doped III-V alloys.
引用
收藏
页码：285 / 292
页数：8
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