ELLIPSOMETRIC ANALYSIS OF REFRACTIVE-INDEX PROFILES PRODUCED BY ION-IMPLANTATION IN SILICA GLASS

被引：23

作者：

BAYLY, AR ^{[1
]}

TOWNSEND, PD ^{[1
]}

机构：

[1] UNIV SUSSEX,SCH MATH & PHYS SCI,BRIGHTON BN1 9QH,SUSSEX,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1973年 / 6卷 / 09期

关键词：

D O I：

10.1088/0022-3727/6/9/316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1115 / 1128

页数：14

共 20 条

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[9] ION-BOMBARDMENT-ENHANCED ETCHING OF SILICON [J].

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[10] RADIATION EFFECTS OF BOMBARDMENT OF QUARTZ AND VITREOUS SILICA BY 7.5-KEV TO 59-KEV POSITIVE IONS [J].

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