LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE OF INASSB GROWN ON GASB SUBSTRATES FROM ANTIMONY SOLUTION

被引：16
|
作者：
MAO, Y
KRIER, A
机构：
[1] Applied Physics Division, School of Physics and Materials, Lancaster University, Lancaster
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 133卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(93)90110-I
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The epitaxial growth of lattice-matched InAsSb onto GaSb substrates from Sb solution by liquid phase epitaxy (LPE) has been investigated. Smooth, mirror-like, epitaxial layers of uniform thickness were obtained under close lattice matching conditions with no evidence of substrate erosion. Photoluminescence emission was observed from the material at room temperature in the wavelength region near 4.2 mum, which is of interest for the fabrication of optoelectronic components for use in infrared CO2 sensors.
引用
收藏
页码：108 / 116
页数：9
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