PROPERTIES OF REACTIVELY-SPUTTERED COPPER-OXIDE THIN-FILMS

被引：212
作者：
DROBNY, VF
PULFREY, DL
机构：
[1] The University of British Columbia, Department of Electrical Engineering, Vancouver
来源：
THIN SOLID FILMS | 1979年 / 61卷 / 01期
关键词：
D O I：
10.1016/0040-6090(79)90504-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Reactive sputtering in oxygen-argon mixtures has been used to produce thin copper oxide films with a range of properties that can be controlled easily by varying the partial pressure of oxygen in the discharge. The properties of phase composition, resistivity and optical constants were investigated. The phases Cu+Cu2O, Cu2O, Cu2O+CuO, CuO were identified and each phase exhibited characteristic values of resistivity and optical constants. Cu2O prepared in this manner could be a useful thin film semiconductor material in view of its high refractive index in the visible range (n = 2.8-3.4), its low value of extinction coefficient below 2.5 eV and readily controllable resistivity over the approximate range 25-104 Ω cm. © 1979.
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收藏
页码：89 / 98
页数：10
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