THE TEMPERATURE VARIATION OF THE CONCENTRATION OF IMPURITY CARRIERS IN SILICON

被引：17

作者：

PUTLEY, EH

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1958年 / 72卷 / 467期

关键词：

D O I：

10.1088/0370-1328/72/5/435

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：917 / 920

页数：4

共 10 条

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KAISER, RH .

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[3] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].

KOHN, W .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320

[4] DEFECTS WITH SEVERAL TRAPPING LEVELS IN SEMICONDUCTORS [J].

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PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (10) :1056-1059

[5] STATISTICS AND GALVANOMAGNETIC EFFECTS IN GERMANIUM AND SILICON WITH WARPED ENERGY SURFACES [J].

LAX, B ;

MAVROIDES, JG .

PHYSICAL REVIEW, 1955, 100 (06) :1650-1657

[6] DETERMINATION OF THE IMPURITY CONCENTRATIONS IN A SEMICONDUCTOR FROM HALL COEFFICIENT MEASUREMENTS [J].

LEE, PA .

BRITISH JOURNAL OF APPLIED PHYSICS, 1957, 8 (08) :340-343

[7] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .2. GROUP-V DONORS [J].

PICUS, G ;

BURSTEIN, E ;

HENVIS, B .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :75-81

[8] THE ELECTRICAL CONDUCTIVITY AND HALL EFFECT OF SILICON [J].

PUTLEY, EH ;

MITCHELL, WH .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (464) :193-200

[9]

SHIFRIN KS, 1944, J THEORET PHYS USSR, V14, P43

[10]

WILSON AH, 1953, THEORY METALS, P115

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