PHOSPHORUS COIMPLANTATION EFFECTS ON OPTIMUM ANNEALING TEMPERATURE IN SI-IMPLANTED GAAS

被引：13

作者：

SUGITANI, S

HYUGA, F

YAMASAKI, K

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 01期

关键词：

D O I：

10.1063/1.345245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phosphorus (P) coimplantation raises the optimum annealing temperature, providing maximum sheet carrier concentration in Si-implanted GaAs active layers. 3×1013 cm-2 coimplanted P raises the optimum annealing temperature for channel layers from 920 to 990 °C, the same temperature for contact layers. Photoluminescence measurement reveals that this is due to suppression of GaAs and SiAs acceptor generations up to about 1000 °C by P coimplantation. These features indicate that P coimplantation helps to achieve GaAs integrated circuits with high performance.

引用

页码：552 / 554

页数：3

共 5 条

[1] COIMPLANTATION AND AUTOCOMPENSATION IN CLOSE CONTACT RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS-CR [J].

FARLEY, CW ;

KIM, TS ;

STREETMAN, BG .

JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) :79-85

[2] THE ROLE OF GALLIUM ANTISITE DEFECT IN ACTIVATION AND TYPE-CONVERSION IN SI IMPLANTED GAAS [J].

HIRAMOTO, T ;

MOCHIZUKI, Y ;

SAITO, T ;

IKOMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12) :L921-L924

[3] ACTIVATION EFFICIENCY IMPROVEMENT IN SI-IMPLANTED GAAS BY P COIMPLANTATION [J].

HYUGA, F ;

YAMAZAKI, H ;

WATANABE, K ;

OSAKA, J .

APPLIED PHYSICS LETTERS, 1987, 50 (22) :1592-1594

[4] CHARACTERIZATION OF A THIN SI-IMPLANTED AND RAPID THERMAL ANNEALED N-GAAS LAYER [J].

SUGITANI, S ;

YAMASAKI, K ;

YAMAZAKI, H .

APPLIED PHYSICS LETTERS, 1987, 51 (11) :806-808

[5] SELF-COMPENSATION IN RAPID THERMAL ANNEALED SILICON-IMPLANTED GALLIUM-ARSENIDE [J].

TIKU, SK ;

DUNCAN, WM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) :2237-2239

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