OPTIMIZATION AND MODELING OF AVALANCHE PHOTODIODE STRUCTURES - APPLICATION TO A NEW CLASS OF SUPERLATTICE PHOTODETECTORS, THE P-I-N, P-N HOMOJUNCTION, AND P-N HETEROJUNCTION APDS

被引：18
|
作者：
BRENNAN, KF [1 ]
机构：
[1] GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 08期
关键词：
D O I：
10.1109/T-ED.1987.23134
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1658 / 1669
页数：12
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