OPTICALLY DETECTED ELECTRON-SPIN POLARIZATION AND HANLE EFFECT IN ALGAAS/GAAS HETEROSTRUCTURES

被引：2

作者：

SCHREINER, M

KRAPF, M

PASCHER, H

DENNINGER, G

WEIMANN, G

SCHLAPP, W

机构：

[1] UNIV BAYREUTH,BIMF,W-8580 BAYREUTH,GERMANY

[2] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY

[3] DEUTSCH BUNDESPOST,FORSCHUNGSINST,W-6100 DARMSTADT,GERMANY

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1992年 / 11卷 / 04期

关键词：

D O I：

10.1016/0749-6036(92)90198-E

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The spin polarization of optically created conduction electrons in p-type AlGaAs/GaAs heterostructures was observed via the degree of circular polarization of the photoluminescence. Application of a magnetic field perpendicular to the propagation of the light k allows one to determine the spin relaxation time T1 and the electron lifetime τ in the conduction band. By tilting the magnetic field with respect to k an estimate of the effective nuclear field acting on the electrons can be obtained. © 1992.

引用

页码：409 / 414

页数：6

共 18 条

[1] ELECTRON-SPIN RESONANCE IN THE TWO-DIMENSIONAL ELECTRON-GAS OF GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].