EFFECTIVE ELECTRON MASS IN INDIUM ARSENIDE AND INDIUM ANTIMONIDE

被引：16

作者：

CHASMAR, RP

STRATTON, R

机构：

来源：

PHYSICAL REVIEW | 1956年 / 102卷 / 06期

关键词：

D O I：

10.1103/PhysRev.102.1686.2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1686 / 1687

页数：2

共 50 条

[11] HIGH PULSED FIELD MAGNETORESISTANCE IN INDIUM ANTIMONIDE AND INDIUM ARSENIDE
CHAMPNESS, CH
CANADIAN JOURNAL OF PHYSICS, 1963, 41 (06) : 890 - &
[12] SCATTERING MECHANISM AND EFFECTIVE MASS OF ELECTRONS IN INDIUM ANTIMONIDE
ERMOLOVI.YB
SOVIET PHYSICS SOLID STATE,USSR, 1969, 11 (04): : 707 - &
[13] STRUCTURE OF CONDUCTION BANDS OF INDIUM ARSENIDE AND ANTIMONIDE
NESMELOVA, IM
TATAR, MG
SHTIVELM.KY
BARYSHEV, NS
KOVALENK.LF
YUDINA, GI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (02): : 308 - +
[14] PREPARATION OF INDIUM ANTIMONIDE AND GALLIUM ARSENIDE FILMS
HARRISON, BC
TOMPKINS, EH
INORGANIC CHEMISTRY, 1962, 1 (04) : 951 - &
[15] PRESSURE DEPENCENCE OF EFFECTIVE MASS OF ELECTRONS IN INDIUM ARSENIDE
DEMCHUK, KM
TSIDILKO.IM
RODIONOV, KP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (05): : 856 - &
[16] EFFECTIVE MASS OF ELECTRONS IN HEAVILY DOPED INDIUM ARSENIDE
SKRIPKIN, VA
LANGE, VN
KOTRUBENKO, BP
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1973, (01): : 140 - 143
[17] ELECTRON IRRADIATION OF INDIUM ANTIMONIDE
AUKERMAN, LW
PHYSICAL REVIEW, 1959, 115 (05): : 1125 - 1132
[18] OPTICAL-CONSTANTS OF INDIUM-ANTIMONIDE, INDIUM ARSENIDE AND INDIUM-PHOSPHIDE AT 632.8 NM
SYSOEVA, NP
AYUPOV, BM
TITOVA, EF
OPTIKA I SPEKTROSKOPIYA, 1985, 59 (01): : 231 - 232
[19] EFFECTIVE MASS OF ELECTRONS IN HEAVILY DOPED CRYSTALS OF INDIUM ANTIMONIDE
NASLEDOV, DN
RADAIKIN.LN
FILIPCHE.AS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (03): : 523 - &
[20] CALCULATION OF REGIONS OF HOMOGENEITY IN INDIUM-ANTIMONIDE AND ARSENIDE
ZAITOV, FA
POLYAKOV, AY
GORSHKOVA, OV
INORGANIC MATERIALS, 1981, 17 (05) : 534 - 537

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