THE JOSEPHSON EFFECT IN HIGH-TC SEMICONDUCTORS AND IN STRUCTURES USING THEM

被引：44
作者：
KUPRIYANOV, MY
LIKHAREV, KK
机构：
来源：
USPEKHI FIZICHESKIKH NAUK | 1990年 / 160卷 / 05期
关键词：
D O I：
10.3367/UFNr.0160.199005b.0049
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：49 / 87
页数：39
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