Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

被引：9

作者：

Dongale, T. D. ^{[1
]}

Khot, K. V. ^{[2
]}

Mohite, S. V. ^{[3
]}

Khandagale, S. S. ^{[4
]}

Shinde, S. S. ^{[3
]}

Patil, V. L. ^{[3
]}

Vanalkar, S. A. ^{[3
]}

Moholkar, A. V. ^{[3
]}

Rajpure, K. Y. ^{[3
]}

Bhosale, P. N. ^{[2
]}

Patil, P. S. ^{[3
]}

Gaikwad, P. K. ^{[4
]}

Kamat, R. K. ^{[4
]}

机构：

[1] Shivaji Univ, Sch Nanosci & Biotechnol, Computat Elect & Nanosci Res Lab, Kolhapur 416004, Maharashtra, India

[2] Shivaji Univ, Dept Chem, Kolhapur 416004, Maharashtra, India

[3] Shivaji Univ, Dept Phys, Kolhapur 416004, Maharashtra, India

[4] Shivaji Univ, Dept Elect, Kolhapur 416004, Maharashtra, India

来源：

JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2016年 / 8卷 / 04期

关键词：

RRAM; Thermal reaction model; Reliability; Nanoelectronics;

D O I：

10.21272/jnep.8(4(1)).04030

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.

引用

页数：4

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