BURIED GAINAS/INP LAYERS GROWN ON NONPLANAR SUBSTRATES BY ONE-STEP LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY

被引：39
|
作者：
GALEUCHET, YD
ROENTGEN, P
GRAF, V
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期
关键词：
D O I：
10.1063/1.100180
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：2638 / 2640
页数：3
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