BURIED GAINAS/INP LAYERS GROWN ON NONPLANAR SUBSTRATES BY ONE-STEP LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY

被引：39

作者：

GALEUCHET, YD

ROENTGEN, P

GRAF, V

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期

关键词：

D O I：

10.1063/1.100180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2638 / 2640

页数：3

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