14-nm FinFET 1.5 Mb Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Differential Current Sensing

被引：5

作者：

Hunt-Schroeder, Eric ^{[1
]}

Anand, Darren ^{[1
]}

Fifield, John ^{[1
]}

Roberge, Michael ^{[1
]}

Pontius, Dale ^{[1
]}

Jacunski, Mark ^{[1
]}

Batson, Kevin ^{[1
]}

Deming, Matthew ^{[1
]}

Khan, Faraz ^{[2
]}

Moy, Dan ^{[3
]}

Cestero, Alberto ^{[3
]}

Katz, Robert ^{[3
]}

Chbili, Zakariae ^{[4
]}

Banghart, Edmund ^{[4
]}

Jiang, Liu ^{[4
]}

Jayaraman, Balaji ^{[5
]}

Tummuru, Rajesh R. ^{[5
]}

Raghavan, Ramesh ^{[5
]}

Mishra, Amit ^{[5
]}

Robson, Norman ^{[3
]}

Kirihata, Toshiaki ^{[3
]}

机构：

[1] GLOBALFOUNDRIES, ASIC Prod Dev Team, Burlington, VT 05452 USA

[2] Univ Calif Los Angeles, Elect & Comp Engn Dept, Los Angeles, CA 90095 USA

[3] GLOBALFOUNDRIES, Res & Technol Dev, Hopewell Jct, NY 12533 USA

[4] GLOBALFOUNDRIES, Qual & Reliabil, Malta, NY 12020 USA

[5] GLOBALFOUNDRIES, Technol Dev, Bengaluru 560045, India

来源：

IEEE SOLID-STATE CIRCUITS LETTERS | 2018年 / 1卷 / 12期

关键词：

Charge trap transistor (CTT); current sensing; non-volatile memory (NVM); one time programmable memory (OTPM); self-heating; twin cell;

D O I：

10.1109/LSSC.2019.2899519

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An 8Kx192b charge trap transistor one time programmable memory (OTPM) is designed and manufactured in GLOBALFOUNDRIES 14-nm bulk FinFET technology without process adders or additional masks. A write timer state machine issues multicycle 192b parallel programming with per bit overwrite protection to minimize stress conditions during a write. On-chip generated voltages are temperature dependent, enabling writes and reads at military grade temperatures. A differential current sense amplifier with self-biased margining circuitry enables programming the OTPM twin cell with known repeatable margin across process-voltage-temperature. Hardware qualification certifies the OTPM to a 10-year 105 degrees C data retention specification and <3 PPM end of life bit error rate pre-ECC.

引用

页码：233 / 236

页数：4

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