LOW-THRESHOLD-VOLTAGE AC THIN-FILM ELECTROLUMINESCENT DEVICE

被引：16

作者：

OKAMOTO, K

NASU, Y

OKUYAMA, M

HAMAKAWA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 01期

关键词：

D O I：

10.7567/JJAPS.20S1.215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：215 / 220

页数：6

共 15 条

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[2]

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[4]

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[5] THIN-FILM DC-EL CELL OF AU-ZNSE - MN-N-GAAS HETERO-STRUCTURE WITH THRESHOLD VOLTAGE OF 20 V [J].

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HAMAKAWA, Y .

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[6]

OKAMOTO K, 1979, APPL PHYS LETT, V35, P508, DOI 10.1063/1.91189

[7] THIN-FILM DC ELECTROLUMINESCENT DEVICES OF AN IN2O3-ZNS - MN-ZNSE-AL STRUCTURE [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (09) :1170-1171

[8]

OKAMOTO K, 1980, JPN J APPL PHYS S, V19

[9] PREPARATION OF PBTIO3 FERROELECTRIC THIN-FILM BY RF SPUTTERING [J].

OKUYAMA, M ;

MATSUI, Y ;

NAKANO, H ;

NAKAGAWA, T ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (08) :1633-1634

[10] EPITAXIAL-GROWTH OF FERROELECTRIC PLZT THIN-FILM AND THEIR OPTICAL-PROPERTIES [J].

OKUYAMA, M ;

USUKI, T ;

HAMAKAWA, Y ;

NAKAGAWA, T .

APPLIED PHYSICS, 1980, 21 (04) :339-343

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