WANNIER EXCITON BINDING-ENERGIES IN GAAS/ALXGA1-XAS QUANTUM-WELLS

被引：9
|
作者：
LU, NH
HUI, PM
HSU, TM
机构：
[1] Department of Physics, National Central University, Chung-li
来源：
SOLID STATE COMMUNICATIONS | 1991年 / 78卷 / 02期
关键词：
D O I：
10.1016/0038-1098(91)90271-V
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We calculate the binding energies of Wannier excitons in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite layers of Al(x)Ga1-xAs as a function of several experimentally adjustable parameters. The exciton Hamiltonian is expressed in the two-band model within the effective mass approximation. The well depth is taken to be finite. A variational method is adopted and a suitable trial wave function with separable form is chosen to solve for the eigenenergies. The binding energies of both the heavy-hole exciton and the light-hole exciton are calculated as a function of the aluminium concentration, band offsets, and the GaAs quantum well width.
引用
收藏
页码：145 / 148
页数：4
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