PROXIMITY EFFECT CORRECTION FOR HIGH-VOLTAGE ELECTRON-BEAM LITHOGRAPHY

被引：16

作者：

ABE, T

TAKIGAWA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.343283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4428 / 4434

页数：7

共 20 条

[11] PROXIMITY CORRECTION ON THE AEBLE-150 [J].

OTTO, OW ;

GRIFFITH, AK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :443-447

[12] CORRECTIONS TO PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY .1. THEORY [J].

PARIKH, M .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4371-4377

[13]

PARIKH M, 1979, J APPL PHYS, V19, P4378

[14]

PARIKH M, 1979, J APPL PHYS, V19, P4383

[15] PROXIMITY EFFECT CORRECTION CALCULATIONS BY THE INTEGRAL-EQUATION APPROXIMATE SOLUTION METHOD [J].

PAVKOVICH, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :159-163

[16]

PFEIFFER HC, 1971, 11TH P S EL ION LAS, P239

[17]

RALF HK, 1982, 10TH INT C EL ION BE, P219

[18]

SUZUKI K, 1983, JPN J APPL PHYS S, V22, P175

[19]

Takigawa T., 1983, Microelectronic Engineering, V1, P121, DOI 10.1016/0167-9317(83)90025-4

[20] A HIGH-DOSE AND HIGH-ACCURACY VARIABLE SHAPED ELECTRON-BEAM EXPOSURE SYSTEM FOR QUARTERMICRON DEVICE FABRICATION [J].

YOSHIKAWA, R ;

WADA, H ;

GOTO, M ;

KUSAKABE, H ;

IKENAGA, O ;

TAMAMUSHI, S ;

NINOMIYA, M ;

TAKIGAWA, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :70-74

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