MICROSTRIP LOW-NOISE X-BAND VOLTAGE-CONTROLLED OSCILLATOR

被引：5

作者：

NIEHENKE, EC

HESS, RD

机构：

[1] Systems Development Division, Westinghouse Defense and Electronic Systems Center, Baltimore, MD 21203

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 12期

关键词：

D O I：

10.1109/TMTT.1979.1129794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Design and performance of an X-band microstrip bipolar varactor-tuned oscillator integrated with an FET amplifier is presented. Wide temperature operation (- 55 to 71°C) constant high power (0.5 W), low post-tuning drift (0.75 MHz) for 8-percent tuning range, and exceptionally low SSB phase noise (-125 dBc/Hz with GaAs hyperabrupt or - 132 dBc/Uz with sillicon abrupt tuning diode at 1-MHz modulation frequency) is reported. Extremely linear frequency-voltage characteristic is achieved with the GaAs hyperabrupt tuning diode for this oscillator without the need for complex linearizing circuitry. Circuit synthesis tech - niques and noise estimation criteria are presented which correlate with the experimental results. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1075 / 1080

页数：6

共 10 条

[1] HIGHLY STABILIZED LOW-NOISE GAAS FET INTEGRATED-OSCILLATOR WITH A DIELECTRIC RESONATOR IN C-BAND [J].