MICROSTRIP LOW-NOISE X-BAND VOLTAGE-CONTROLLED OSCILLATOR

被引：5
作者：
NIEHENKE, EC
HESS, RD
机构：
[1] Systems Development Division, Westinghouse Defense and Electronic Systems Center, Baltimore, MD 21203
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 12期
关键词：
D O I：
10.1109/TMTT.1979.1129794
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Design and performance of an X-band microstrip bipolar varactor-tuned oscillator integrated with an FET amplifier is presented. Wide temperature operation (- 55 to 71°C) constant high power (0.5 W), low post-tuning drift (0.75 MHz) for 8-percent tuning range, and exceptionally low SSB phase noise (-125 dBc/Hz with GaAs hyperabrupt or - 132 dBc/Uz with sillicon abrupt tuning diode at 1-MHz modulation frequency) is reported. Extremely linear frequency-voltage characteristic is achieved with the GaAs hyperabrupt tuning diode for this oscillator without the need for complex linearizing circuitry. Circuit synthesis tech - niques and noise estimation criteria are presented which correlate with the experimental results. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码：1075 / 1080
页数：6
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