PERIOD DOUBLING IN DIRECTLY MODULATED INGAASP SEMICONDUCTOR-LASERS

被引：48
作者：
CHUSSEAU, L
HEMERY, E
LOURTIOZ, JM
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 09期
关键词：
D O I：
10.1063/1.101770
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：822 / 824
页数：3
相关论文
共 15 条
[1]   EFFECT OF GAIN NONLINEARITIES ON PERIOD DOUBLING AND CHAOS IN DIRECTLY MODULATED SEMICONDUCTOR-LASERS [J].
AGRAWAL, GP .
APPLIED PHYSICS LETTERS, 1986, 49 (16) :1013-1015
[2]   SUBHARMONIC BIFURCATIONS AND IRREGULAR PULSING BEHAVIOR OF MODULATED SEMICONDUCTOR-LASERS [J].
CHEN, YC ;
WINFUL, HG ;
LIU, JM .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :208-210
[3]   OBSERVATION OF CHAOS IN A SEMICONDUCTOR-LASER WITH DELAYED FEEDBACK [J].
CHO, Y ;
UMEDA, T .
OPTICS COMMUNICATIONS, 1986, 59 (02) :131-136
[4]   CHAOS IN THE COHERENCE COLLAPSE OF SEMICONDUCTOR-LASERS [J].
DENTE, GC ;
DURKIN, PS ;
WILSON, KA ;
MOELLER, CE .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (12) :2441-2447
[5]   GIGABIT PULSE POSITION BISTABILITY IN SEMICONDUCTOR-LASERS [J].
GALLAGHER, DFG ;
WHITE, IH ;
CARROLL, JE ;
PLUMB, RG .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (10) :1391-1398
[6]   DYNAMIC-RESPONSE OF DIRECTLY MODULATED SEMICONDUCTOR-LASERS [J].
HEMERY, E ;
LOURTIOZ, JM .
REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (11) :1571-1580
[7]   FREQUENCY CHARACTERIZATION OF PHOTODETECTORS BY FABRY-PEROT INTERFEROMETRY OF MODULATED SEMICONDUCTOR-LASERS [J].
HEMERY, E ;
CHUSSEAU, L ;
LOURTIOZ, JM .
ELECTRONICS LETTERS, 1989, 25 (01) :42-44
[8]  
HEMERY E, UNPUB
[9]   OPTICAL BISTABILITY AND CHAOS IN A SEMICONDUCTOR-LASER WITH A SATURABLE ABSORBER [J].
KAWAGUCHI, H .
APPLIED PHYSICS LETTERS, 1984, 45 (12) :1264-1266
[10]   HIGH-YIELD MANUFACTURE OF VERY LOW THRESHOLD, HIGH-RELIABILITY, 1.30-MU-M BURIED HETEROSTRUCTURE LASER-DIODES GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
KRAKOWSKI, M ;
BLONDEAU, R ;
KAZMIERSKI, K ;
RAZEGHI, M ;
RICCIARDI, J ;
HIRTZ, P ;
DECREMOUX, B .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (10) :1470-1474
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