EVALUATION OF TEMPERATURE EFFECTS IN P-TYPE SILICON DETECTORS

被引：48

作者：

GRUSELL, E ^{[1
]}

RIKNER, G ^{[1
]}

机构：

[1] UNIV UPPSALA, AKAD SJUKHUSET, INST ONCOL, DEPT HOSP PHYS, S-75105 UPPSALA, SWEDEN

来源：

关键词：

D O I：

10.1088/0031-9155/31/5/005

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

引用

页码：527 / 534

页数：8

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