PROCESS-INDUCED DEFECTS IN INB CAUSED BY CHEMICAL-VAPOR-DEPOSITION OF SURFACE PASSIVATION DIELECTRICS

被引：17

作者：

HASHIZUME, T

HASEGAWA, H

RIEMENSCHNEIDER, R

HARTNAGEL, HL

机构：

[1] HOKKAIDO UNIV,INTERFACE QUANTUM ELECTR RES CTR,SAPPORO,HOKKAIDO 060,JAPAN

[2] HOKKAIDO UNIV,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN

[3] TH DARMSTADT,INST HOCHFREQUENZTECH,D-64283 DARMSTADT,GERMANY

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期

关键词：

SURFACE DAMAGE; PASSIVATION; PROCESS-INDUCED DEEP LEVEL; INTERFACE STATES; INP; MIS; CVD; PROCESS; DLTS;

D O I：

10.1143/JJAP.33.727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Near-surface defects of InP produced during three different chemical vapor deposition (CVD) processes were systematically characterized by capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Deposition of plasma-enhanced CVD (PECVD) phosphosilicate glass (PSG) and SiO2 films produced the same bulk level, lying at 0.35 eV below the conduction band edge,near the surface region of InP. Such a level was absent in the samples prepared by the photo CVD process. In addition, the photo CVD process gave a lower density of interface states than the PECVD process. The origin of the bulk trap and the energy- and space-distributed nature of interface states are discussed.

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收藏

页码：727 / 733

页数：7

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