EMBOSSED GRATING LEAD CHALCOGENIDE DISTRIBUTED-FEEDBACK LASERS

The successful preparation of double-heterostructure (DH) distributed-feedback (DFB) PbEuSe lasers using an embossing technique for the DFB sub-micrometer grating is reported here for the first time. The submicrometer grating was performed in (111) oriented silicon wafers by holographic exposure and argon ion milling. Using a hydrostatic press this grating was embossed into a lead chalcogenide wafer, covered by a DH structure grown by molecular beam epitaxy. Lasers made from wafers with grating periodicities of 0.678 and 0.755-mu-m show DFB characteristics at the corresponding emission wavenumbers around 1420 and 1590 cm-1.