ELECTRICAL INSULATING PROPERTIES OF METAL - LB LAYERS - METAL DEVICES

被引:0
作者
SCHINDLER, T
SCHEUNEMANN, U
HICKEL, W
机构
[1] Hoechst Ag, Frankfurt
来源
MAKROMOLEKULARE CHEMIE-MACROMOLECULAR SYMPOSIA | 1991年 / 46卷
关键词
D O I
10.1002/masy.19910460124
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
To investigate the electrical insulating properties of LB films, a metal-insulator-metal structure was chosen. The metals used were aluminium and gold. Fundamental issues concerning the junction geometry like a) metal surface roughness and subsequent LB film deposition and b) LB film damage by top metal electrode evaporation were treated. Current versus time (I(t), V = const), current versus voltage (I/V) and charge versus time (Q(t)) curves of junctions were recorded using the polycondensate PK 08 as LB film material. The static capacitance of the junctions and the dielectric constant of PK 08 have been calculated with Q(t) curves.
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收藏
页码:193 / 198
页数:6
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