EXPERIMENTAL AND THEORETICAL-STUDY OF SPATIAL VARIATION OF JUNCTION VOLTAGE AND CURRENT DISTRIBUTION IN NARROW STRIPE INJECTION-LASERS

被引:11
作者
SOMMERS, HS [1 ]
NORTH, DO [1 ]
机构
[1] RCA LABS,PRINCETON,NJ 08540
关键词
D O I
10.1063/1.323476
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4460 / 4467
页数:8
相关论文
共 20 条
[1]   GAIN-INDUCED GUIDING AND ASTIGMATIC OUTPUT BEAM OF GAAS LASERS [J].
COOK, DD ;
NASH, FR .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1660-1672
[2]   CURRENT THRESHOLDS IN STRIPE-CONTACT INJECTION LASERS [J].
DUMKE, WP .
SOLID-STATE ELECTRONICS, 1973, 16 (11) :1279-1281
[3]   HERMITE-GAUSSIAN MODE PATTERNS IN GAAS JUNCTION LASERS [J].
DYMENT, JC .
APPLIED PHYSICS LETTERS, 1967, 10 (03) :84-&
[4]   CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS [J].
HAKKI, BW .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) :5021-5028
[5]   GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG JUNCTION PLANE [J].
HAKKI, BW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :292-302
[6]  
JONSCHER AK, 1966, P IPPS S GAAS READIN
[7]   ELECTROMAGNETIC THEORY OF THE SEMICONDUCTOR JUNCTION LASER [J].
MCWHORTER, AL .
SOLID-STATE ELECTRONICS, 1963, 6 (05) :417-423
[8]   THEORY OF MODAL CHARACTER, FIELD STRUCTURE, AND LOSSES FOR SEMICONDUCTOR-LASERS [J].
NORTH, DO .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (10) :616-624
[9]   SATURATION OF JUNCTION VOLTAGE IN STRIPE-GEOMETRY (ALGA)AS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS - COMMENT [J].
NORTH, DO ;
SOMMERS, HS .
APPLIED PHYSICS LETTERS, 1977, 30 (02) :116-118
[10]   SATURATION BEHAVIOR OF SPONTANEOUS EMISSION FROM DOUBLE-HETEROSTRUCTURE JUNCTION LASERS OPERATING HIGH ABOVE THRESHOLD [J].
PAOLI, TL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :267-272