GEOMETRICAL STRUCTURES OF THE GE/SI(111) INTERFACE AND THE SI(111) (7X7) SURFACE

被引：33

作者：

DEV, BN

MATERLIK, G

GREY, F

JOHNSON, RL

CLAUSNITZER, M

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

[2] UNIV HAMBURG,INST EXPTL PHYS 2,D-2000 HAMBURG 50,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 57卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.57.3058

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：3058 / 3061

页数：4

共 14 条

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[4]

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[5]

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PHYSICAL REVIEW LETTERS, 1986, 56 (03) :236-239

[7] PRESERVATION OF A 7 X 7 PERIODICITY AT A BURIED AMORPHOUS-SI/SI(111) INTERFACE [J].

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PHYSICAL REVIEW LETTERS, 1986, 56 (04) :355-358

[8] THE INFLUENCE OF RECONSTRUCTION ON EPITAXIAL-GROWTH - GE ON SI(100)-2X1) AND SI(111)-(7X7) [J].

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GIBSON, WM .

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[9] REORDERING OF RECONSTRUCTED SI-SURFACES UPON GE-DEPOSITION AT ROOM-TEMPERATURE [J].

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PHYSICAL REVIEW LETTERS, 1984, 53 (03) :294-297

[10] LOCALIZED MODEL FOR HYDROGEN CHEMISORPTION ON THE SILICON (111) SURFACE [J].

HERMANN, K ;

BAGUS, PS .

PHYSICAL REVIEW B, 1979, 20 (04) :1603-1610

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